The 36 GB HBM3E memory products are based on Samsung's 4th generation 10nm-class (14nm) fabrication technology and use advanced thermal compression non-conductive film (TC NCF) to maintain the same z-height as 8-Hi HBM3 products. Samsung estimates that its 12-Hi HBM3E 36 GB modules can increase the average speed for AI training by 34% and expand the number of simultaneous users of inference services by more than 11.5 times. The company has already begun providing samples of the HBM3E 12H to customers, with mass production scheduled to commence in the first half of this year.
Key takeaways:
- Samsung has completed the development of its 12-Hi 36 GB HBM3E memory stacks, codenamed Shinebolt, which are currently the world's fastest memory devices.
- The new memory modules feature a data transfer rate of 10 GT/s and offer a peak bandwidth of 1.28 GB/s per stack, the industry's highest per-device memory bandwidth.
- Samsung's Shinebolt memory stacks are based on the company's 4th generation 10nm-class (14nm) fabrication technology and use advanced thermal compression non-conductive film (TC NCF) to maintain the same z-height as 8-Hi HBM3 products.
- Samsung has already begun providing samples of the HBM3E 12H to customers, with mass production scheduled to commence in the first half of this year.